当社代表取締役山﨑舜平が、結晶性酸化物半導体CAAC-IGZO®に関する共編。酸化物半導体 - 研究開発 | 株式会社半導体エネルギー研究所。スピントランジスタの実現に向けて酸化物素子で巨大磁気抵抗と電流変調。Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO : Application to Lsi (Wiley-sid Series in Display Technology)2017 John Wiley and Sons酸化物半導体IGZOのLSI応用をまとめた書籍です。This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc. The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs. It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process.。ナノシート酸化物半導体を用いたトランジスタ開発:原子層堆積法で均一